Operation methods for memory cell and array for reducing punch through leakage

ABSTRACT

A method for programming a first memory cell in a memory array. In a specific embodiment, each memory cell has a drain, a source, a channel, and a control gate overlying a charge storage material and the channel. The source of the first memory cell is coupled to the drain of a second memory cell. A voltage is applied to the drain of the first memory cell, and the source of the second memory cell is grounded. The method includes floating the drain of the second memory cell and the source of the first memory cell and turning on the channels of the first and second memory cells, effectively forming an extended channel region. Hot carriers are injected to the charge storage material of the first cell to program the first memory cell. The extended channel lowers electrical fields and reduces punch through leakage in unselected memory cells.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a divisional application of U.S. patent applicationSer. No. 12/264,886, filed Nov. 4, 2008, which claims benefit ofpriority to U.S. Provisional Application 60/985,966, filed Nov. 6, 2007,U.S. Provisional Application 60/986,960 filed Nov. 9, 2007, U.S.Provisional Application 60/986,198, filed Nov. 7, 2007, and U.S.Provisional Application 60/986,479, filed Nov. 8, 2007, commonlyassigned, which are incorporated in their entirety by reference for allpurpose. This application is also related to concurrently filed U.S.patent application Ser. No. ______, Attorney docket number 87303-807513(021265-001111US), which is another divisional application of the parentfor this application, U.S. patent application Ser. No. 12/264,886, filedNov. 4, 2008, as described above, commonly assigned and incorporated byreference herein for all purposes. U.S. patent application Ser. No.12/264,886 is also related to concurrently filed U.S. patent applicationSer. No. 12/264,893, Attorney docket number 021265-001310US, commonlyassigned and incorporated by reference herein for all purposes.

BACKGROUND OF THE INVENTION

The present invention is directed to non-volatile memory cell arrays andtheir methods of operation. More particularly, the invention provides amethod for programming a memory cell in a non-volatile memory cell arraythat reduces punch through leakage in unselected memory cells. Merely byway of example, the invention has been applied to certain non-volatilememory arrays including floating gate and nitride charge storagematerials. But it would be recognized that the invention has a muchbroader range of applicability.

Non-volatile memory (“NVM”) generally refers to semiconductor memorywhich is able to continually store information even when the supply ofelectricity is removed from the device containing the NVM cell.Conventional NVM includes Mask Read-Only Memory (Mask ROM), ProgrammableRead-Only Memory (PROM), Erasable Programmable Read-Only Memory (EPROM),Electrically Erasable Programmable Read-Only Memory (EEPROM), and FlashMemory. Non-volatile memory is extensively used in the semiconductorindustry and is a class of memory developed for long term storage ofprogrammed data. Typically, non-volatile memory can be programmed, readand/or erased based on the device's end-use requirements, and theprogrammed data can be stored for a long period of time.

FIG. 1 is a cross-sectional view diagram of a conventional non-volatilememory cell structure. As shown, memory cell 100 has source 102 anddrain 103 formed within substrate 101. Control gate 105 overlies acharge storage material 107. The charge storage material 107 isseparated from the substrate by dielectric 108. The charge storagematerial 107 is separated from the control gate 105 by dielectric 106.Dielectric 108 is often a tunnel oxide, and dielectric 106 is often acomposite oxide-nitride-oxide (ONO) layer.

The charge storage layer 107 can include different materials andcompositions. In an example, the charge storage material 107 is afloating gate. In another example, a memory cell has a so-called SONOS(silicon-oxide-nitride-oxide-silicon) structure. The nitride layerserves as a charge storage layer 107.

Non-volatile memory cell 100 can be programmed using a channel hotelectron programming method. In an example, the source 102 is grounded.The drain 103 is coupled to a 4-5V voltage. A gate voltage of 8-10V isapplied to control gate 105. Hot electrons are generated in the channelregion and injected into the charge storage material 107. Theseelectrons cause memory cell 100 to be programmed to a high thresholdvoltage state.

As discussed above, certain high voltages are applied to a memory cellduring cell programming. In a memory array that includes memory cellsarrange in rows and columns, the drain terminals of multiple memorycells are usually connected to a bit line, and the control gates ofmultiple memory cells are often connected to a word line. During aprogramming operation, a high voltage intended for the selected cell isalso applied to a number of unselected cells that are connected to thebit line. This high voltage appears on the drain terminals of unselectedmemory cells and can cause high electric fields and punch throughleakage in the unselected memory cells. The leakage current can resultin a high power consumption of the memory chip. The leakage current canalso lead to long term reliability problems of the memory cells. Withcontinued shrinkage of semiconductor devices, the problem of punchthrough leakage is becoming increasingly more serious.

Accordingly, there is a need for improved methods for operatingnon-volatile memory cells that can reduce punch through leakage current.There is also a need for improved non-volatile memory array structuresthat can utilize the improved operation methods.

BRIEF SUMMARY OF THE INVENTION

The present invention is directed to non-volatile memory cell arrays andtheir methods of operation. More particularly, the invention provides amethod for programming a memory cell in a non-volatile memory cell arraythat reduces punch through leakage in unselected memory cells. Merely byway of example, the invention has been applied to certain non-volatilememory arrays including floating gate and nitride charge storagematerials. But it would be recognized that the invention has a muchbroader range of applicability.

According to a specific embodiment, the present invention provides amethod for programming a first memory cell in a non-volatile memoryarray. In a specific embodiment, each memory cell has a drain, a source,a channel, and a control gate overlying a charge storage material andthe channel. The source of the first memory cell is coupled to the drainof a second memory cell. A voltage is applied to the drain of the firstmemory cell, and the source of the second memory cell is grounded. Themethod includes floating the drain of the second memory cell and thesource of the first memory cell and turning on the channels of the firstand second memory cells, effectively forming an extended channel region.Hot carriers are injected to the charge storage material of the firstcell to program the first memory cell. The extended channel lowerselectrical fields and reduces punch through leakage in unselected memorycells.

The memory cell operations methods discussed above can be applied tononvolatile memory arrays having different array architectures presentedbelow according to embodiments of the invention. As noted below, in someof the operation methods, an extended channel region is provided byfloating one or more doped regions between the source and drain biasterminals which receive the applied bias voltages. The electric field isreduced in the extended channel region, and punch through currents arereduced.

Various memory array architectures and operations are discussed below.It is noted that in the examples to follow, the memory cells can includefloating gate or nitride in the charge storage member. The memory cellsare connected in different array structures using bit lines and wordlines. Additionally, various voltage sources are coupled to the bitlines and/or word lines through switch devices controlled by selectlines. As shown below, during operation, different voltages are appliedto bit lines and word lines, so that the terminals of the memory cellscan be set at the potentials required for the different operations.Under some conditions, potentials of the select lines are raised orlowered to turn on or turn off the switch devices to allow the propervoltages to be applied to the memory cell terminals.

According to embodiments of the invention, each of the memory cells canbe a multilevel memory cell. In other words, each memory cell is capableof holding multiple bits of information. For multilevel operation, thememory cell includes multiple threshold voltage targets. The programmingmethod includes programming the memory cell until the threshold voltageof the memory cell is within a predetermined range of a predeterminedthreshold voltage target.

It is understood that in the operation methods discussed below, thememory cells operate like NMOS transistors, i.e., having n-typesource/drain and a p-well. In alternative embodiments, memory cellsconfigured like PMOS transistors can also be used, and the biasedvoltages will be adjusted accordingly.

In embodiments of the present invention, the memory cell structures andmethods associated therewith can be included in various integratedcircuits. In an embodiment of the invention, an integrated circuitcomprises a plurality of memory cells on a substrate and a circuit unitconfigured to perform various steps, including:

-   -   1. selecting a first memory cell, the selected memory cell        comprising a first doped region, a second doped region, a first        channel region therebetween, a first charge storage member        overlying the first channel region, and a first control gate        overlying the first charge storage member;    -   2. selecting a third doped region, the third doped region being        separated from the second doped region by at least a second        channel region, a second control gate overlying the second        channel region; and    -   3. applying a bias arrangement to program the first memory cell,        In a specific embodiment, the bias arrangement includes:    -   1. applying a substrate voltage to the substrate;    -   2. applying a first voltage to the first doped region;    -   3. applying a second voltage to the third doped region;    -   4. applying a third voltage to the first control gate and the        second control gate; and    -   5. floating the second doped region.        Additional methods of operation are illustrated in detail in the        description to follow.

According to alternative embodiments of the present invention, thememory cell structures and operation methods associated therewith can beused to form various memory arrays. Exemplary memory arrays andoperational methods are illustrated in the examples below.

Many benefits are achieved by way of the present invention overconventional techniques. For example, the present technique provides aneasy to use process that relies upon conventional technology. In someembodiments, the invention provides methods for operating a virtualground non-volatile memory array that reduces punch through leakagecurrent in the memory array. In some embodiment, the invention providesnon-volatile memory arrays including various configurations of globalbit lines, local bit lines, global source lines, and local source lines.In some embodiments, switch devices couple voltage sources to variousbit lines and source lines. Operation methods for each array structureare also provided for reducing punch through leakage current.Additionally, the memory cells and array structures can be made usingconventional process technology without substantial modifications toconventional equipment and processes. These and other benefits will bedescribed in more detail throughout the present specification and moreparticularly below.

Various additional objects, features and advantages of the presentinvention can be more fully appreciated with reference to the detaileddescription and accompanying drawings that follow.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified view diagram illustrating a conventional methodfor programming a nonvolatile memory cell;

FIG. 2A is a simplified view diagram illustrating a method forprogramming a nonvolatile memory cell according to an embodiment of thepresent invention;

FIG. 2B is a simplified view diagram illustrating a method forprogramming a nonvolatile memory cell according to another embodiment ofthe present invention;

FIG. 2C is a simplified view diagram illustrating a method forprogramming a nonvolatile memory cell according to yet anotherembodiment of the present invention;

FIG. 3 is a simplified view diagram illustrating an exemplary biasing oftwo unselected nonvolatile memory cells in an array according to anembodiment of the present invention;

FIG. 3A is a simplified view diagram illustrating an exemplary methodfor inhibiting programming disturbance in an unselected nonvolatilememory cell in an array according to an embodiment of the presentinvention;

FIG. 4 is a simplified view diagram illustrating a method for erasing afloating gate nonvolatile memory cell according to an embodiment of thepresent invention;

FIG. 4A is a simplified view diagram illustrating a method for erasing afloating gate nonvolatile memory cell according to another embodiment ofthe present invention;

FIG. 5 is a simplified view diagram illustrating a method for reading afloating gate nonvolatile memory cell according to an embodiment of thepresent invention;

FIG. 6 is a simplified view diagram illustrating a method forprogramming a nitride containing nonvolatile memory cell according to anembodiment of the present invention;

FIG. 6A is a simplified view diagram illustrating a method forprogramming a nitride containing nonvolatile memory cell according toanother embodiment of the present invention;

FIG. 7 is a simplified view diagram illustrating an exemplary biasing oftwo unselected nitride containing nonvolatile memory cells in an arrayaccording to an embodiment of the present invention;

FIG. 7A is a simplified view diagram illustrating an exemplary methodfor inhibiting programming disturbing in an unselected nitridecontaining nonvolatile memory cell in an array according to anembodiment of the present invention;

FIG. 8 is a simplified view diagram illustrating a method for erasing anitride containing nonvolatile memory cell according to an embodiment ofthe present invention;

FIG. 8A is a simplified view diagram illustrating a method for erasing anitride containing nonvolatile memory cell according to anotherembodiment of the present invention;

FIG. 9 is a simplified view diagram illustrating a method for reading anitride containing nonvolatile memory cell according to an embodiment ofthe present invention;

FIG. 10 is a simplified view diagram illustrating a nonvolatile memoryarray including isolation structures according to an embodiment of thepresent invention;

FIG. 11 is a simplified view diagram illustrating another nonvolatilememory array including isolation structures according to anotherembodiment of the present invention;

FIG. 12 is a simplified view diagram illustrating a virtual groundnonvolatile memory array according to an embodiment of the presentinvention;

FIG. 13 is a simplified view diagram illustrating another virtual groundnonvolatile memory array according to an alternative embodiment of thepresent invention;

FIG. 14 is a simplified view diagram illustrating a programming methodfor the virtual ground nonvolatile memory array of FIG. 13 according toan embodiment of the present invention;

FIG. 15 is a simplified view diagram illustrating another programmingmethod for the virtual ground nonvolatile memory array of FIG. 13according to an alternative embodiment of the present invention;

FIG. 16 is a simplified view diagram illustrating a nonvolatile memoryarray including isolation structures according to yet another embodimentof the present invention; and

FIGS. 17 and 17A are simplified view diagrams illustrating a portion ofthe nonvolatile memory array of FIG. 16 according to an embodiment ofthe present invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is directed to non-volatile memory cell arrays andtheir methods of operation. More particularly, the invention provides amethod for programming a memory cell in a non-volatile memory cell arraythat reduces punch through leakage in unselected memory cells. Merely byway of example, the invention has been applied to certain non-volatilememory arrays including floating gate and nitride charge storagematerials. But it would be recognized that the invention has a muchbroader range of applicability.

Various operation methods and array structures will now be discussed inone or more of the embodiments to follow. Various features in theseembodiments are merely examples, which should not unduly limit the scopeof the claims herein. One of ordinary skill in the art would recognizemany variations, modifications, and alternatives.

FIG. 2A is a simplified view diagram illustrating a method forprogramming a nonvolatile memory cell according to an embodiment of thepresent invention. This diagram is merely an example, which should notunduly limit the scope of the claims herein. One of ordinary skill inthe art would recognize other variations, modifications, andalternatives. As shown, memory array device 200, which can be part of amemory array, has a semiconductor substrate of the first conductivitytype, e.g. P-type well region 201 in a silicon substrate. A plurality ofspaced-apart doped regions of a second conductivity type are disposed inthe substrate. For example, n+ doped regions 211, 212, and 213 arelocated in the substrate. Depending on the embodiment, these dopedregions can be used as drain or source regions in the memory cell.Channel region 214 is located between doped regions 211 and 212, andchannel region 215 is located between doped regions 212 and 213. Each ofthe memory cells has a charge storage member overlying each of thechannel regions. For example, charge storage member 216 overlies channelregion 214 in the first memory cell, and charge storage member 217overlies channel region 215 in the second memory cell. Each of thememory cells also has a control gate overlying the respective chargestorage member. In device 200, control gate 218 overlies charge storagemember 216 in the first memory cell, and control gate 219 overliescharge storage member 217. In a specific example, control gates 218 and219 are connected by a word line 206 of a memory array.

In a specific example, the charge storage members 216 and 217 can befloating gates made of, e.g., polysilicon. In another example, thecharge storage members 216 and 217 can include nitride containingmaterial, e.g., in a SONOS memory cell. Of course, other charge storagematerial can also be used. Additionally, even though a p-type well andn+ doped regions are shown in FIG. 2A, it is understood that otheralternatives can also be used. For example, p+ doped regions in ann-type well can also be used. Of course, there can be other variations,modifications, and alternatives.

According to a specific embodiment, the present invention providesmethods of operating a memory cell in a non-volatile memory arraydevice. A method of programming a memory cell is now discussed withreference to FIG. 2A. First, a memory cell is selected for programming.In this example, the memory cell on the right hand side of device 200includes a first doped region 211, a second doped region 212, a firstchannel region 214 therebetween. A first charge storage member 216overlying the first channel region 214. A first control gate 218overlying the first charge storage member 216. The method includesselecting a third doped region 213, which is separated from the seconddoped region 212 by at least a second channel region 215. As shown, asecond control gate 219 overlies the second channel region 215. Forprogramming, a ground potential is applied to the substrate (p-well)201, a first voltage (e.g. 0 V) is applied to the third doped region213, a second voltage (e.g. 10 V) is applied to wordline 206 thatconnect to both the first control gate 218 and the second control gate219 to turn on the first channel region 214, and the second channelregion 215. Additionally, the second doped region 212 is maintained at afloating potential. A third voltage (e.g. 5 V) is applied to the firstdoped region 211. In this specific example, device 200 operates like anonvolatile memory device having an extended channel region.Specifically, doped region 213 is the grounded source region. Channelregions 214 and 215 and the floating doped region 212 function like anextended channel. With appropriate voltages on the control gates anddoped region 211 operating as the drain, channel hot electrons (CHE) areinjected into the charge storage member 216 of the first memory cell onthe right hand side of device 200.

As another example, FIG. 2B is a simplified view diagram illustrating amethod for programming a nonvolatile memory cell according to anotherembodiment of the present invention. As shown in memory device 230, thethird doped region is separated from the second doped region 212 by twoor more channel regions, such as 215 and 224. Control gates 219 and 225overlie each of the two or more channel regions 215 and 224. For memorydevice 230, the programming method is similar to the method describedabove in connection to FIG. 2A in that an extended channel is provided,with appropriate biases applied to the additional device components.Specifically, the second voltage (e.g. 10 V) is applied to theadditional control gates such as 225 as well to turn on each of thechannel region. The additional doped regions, such as 222, aremaintained at an electrically floating potential. In this example,control gates 218, 219, and 225 are connected to word line 226 of thememory array.

FIG. 2C is a simplified view diagram illustrating a method forprogramming a nonvolatile memory cell according to yet anotherembodiment of the present invention. In this example, the erased cell ispopulated with electrons and has a high Vt. The cell is programmed byband-to-band hot hole tunneling to reduced the electrons and achieve alow Vt. The bias voltages are shown in FIG. 2C. In this embodiment, theapplied gate voltage (e.g. −5V) to the first and the second controlgates (CG) would not turn on the first memory cell. In FIG. 2C, thememory cell on the left is labeled “program Bit-S” and illustrates amethod for programming the source-side bit (Bit-S), with 5V on thesource region, −5V on the control gate (CG), and 0V on the P-well.Similarly, the memory cell on the right is labeled “program Bit-D” andillustrates a method for programming the drain-side bit (Bit-D), with 5Von the drain region, −5V on the control gate (CG), and 0V on the P-well.

Although the above has been shown using a selected group of componentsfor the device 200, there can be many alternatives, modifications, andvariations. For example, some of the components may be expanded and/orcombined. Other components may be inserted to those noted above.Depending upon the embodiment, the arrangement of components may beinterchanged with others replaced. Further details of these componentsare found throughout the present specification and more particularlybelow.

According to embodiments of the invention, many benefits are provided bythe programming methods described above in connection with FIGS. 2A-2C.As an example, FIG. 3 is a simplified view diagram illustrating anexemplary biasing of two unselected nonvolatile memory cells in an arrayaccording to an embodiment of the present invention. This diagram ismerely an example, which should not unduly limit the scope of the claimsherein. One of ordinary skill in the art would recognize othervariations, modifications, and alternatives.

As shown, memory device 300 is similar to memory device 200 in FIG. 2A,with CG designates control gate and FG designates floating gate. Sincememory device 300 is unselected during programming, a bias voltage of 0V or a negative gate voltage −Vg is applied to word line 306, which isconnected to control gates 318 and 319. In a memory array, doped region311 receives a voltage, e.g. 5 V, from a bit line, and doped region 313receives a voltage, e.g. 0 V from another bit line. Because doped region312 is floating, an extended channel is provided between doped regions311 and 313. As a result, the electric field is lowered in the channelregion, and punch through condition is reduced.

FIG. 3A is a simplified view diagram illustrating an exemplary methodfor inhibiting programming disturbance in an unselected nonvolatilememory cell in an array according to an embodiment of the presentinvention. FIG. 3A shows part of a memory array 350 to illustrate amethod for “Floating gate cell inhibit”. The control gate (CG) is biasedat −5V, and the n+ doped region on the right is floating (marked by“F”). Here, the erased cell is populated with electrons and has a highVt. Bit B is being programmed by band-to-band hot hole tunneling whileprogramming is prohibited (marked by X) at Bit A. The bias conditionsare shown in FIG. 3A in which BL3=3V that reduces the lateral field incell A.

FIG. 4 is a simplified view diagram illustrating a method for erasing afloating gate nonvolatile memory cell according to an embodiment of thepresent invention. This diagram is merely an example, which should notunduly limit the scope of the claims herein. One of ordinary skill inthe art would recognize other variations, modifications, andalternatives. As shown, memory device 400 is similar to memory device200, but the charge storage members include a floating gate (FG). Duringerase, a negative voltage, e.g. −20V, is applied to control gates (CG)418 and 419 through word line 406, the substrate (p-well) 401 ismaintained at 0 V, and doped regions such as 411, 412, and 413 arefloating (marked by “F”). Under such bias conditions, electrons areremoved from the floating gates by Fowler-Nordham tunneling. The methodfor erasing the memory device can also be extended to a device such as230 by applying the negative gate voltage to the additional controlgates and floating the additional doped regions.

FIG. 4A is a simplified view diagram illustrating a method for erasing afloating gate nonvolatile memory cell 450 according to anotherembodiment of the present invention. In this example, the control gate(CG) is biased at a high voltage, for example, 20V. As shown, cell eraseis accomplished by FN tunneling electrons into the charge storagematerial, in this case, the floating gate. As a result, an erased cellhas a high Vt.

FIG. 5 is a simplified view diagram illustrating a method for reading afloating gate nonvolatile memory cell according to an embodiment of thepresent invention. This diagram is merely an example, which should notunduly limit the scope of the claims herein. One of ordinary skill inthe art would recognize other variations, modifications, andalternatives. As shown, memory device 500 is similar to memory device400, having a floating gate in the charge storage members. The methodfor reading includes maintaining a ground potential at the substrate(p-well) 501, maintaining a ground potential at the second doped region512, applying a gate voltage, e.g. 5V, to the first control gate 518through wordline 506; and applying a read drain voltage, e.g., 0.6 V, tothe first doped region 511. Under this bias condition, a transistor isformed with source 512, drain 511, and gate 518. A current provide atdrain 511 is related to the charge stored in the charge storage member.In an embodiment, sensing the current against predetermined referencecurrent can provide the state of the memory cell. The drain 513 of anadjacent transistor is floating (marked by “F”).

FIG. 6 is a simplified view diagram illustrating a method forprogramming a nitride containing nonvolatile memory cell according to anembodiment of the present invention. This diagram is merely an example,which should not unduly limit the scope of the claims herein. One ofordinary skill in the art would recognize other variations,modifications, and alternatives. As shown, memory device 600 is similarto memory device 200 of FIG. 2A. The charge storage member includes anitride containing material, e.g. in a SONOS memory cell. In a specificexample, the charge storage member 616 includes an ONO layer of oxide641, nitride 643, and oxide 645. The injected charges tend to be trappednear the drain side of the charge storage member. The method forprogramming is substantially the same as the method discussed above inconnection with memory device 200.

FIG. 6A is a simplified view diagram illustrating a method 650 forprogramming a nitride containing nonvolatile memory cell according toanother embodiment of the present invention. In this method, a nitridecontaining nonvolatile memory cell (SiN storage cell) is programmed byband-to-band (BTB) hot hole program to a low threshold voltage (Vt). Thedrawing on the left illustrates a method for programming a source-sidebit of storage cell #1 (Bit-S1), with a gate biased at −5V, a firstdoped region biased at 5V, a second doped region floating (F), a thirddoped region biased at 0V, and the P-well biased at 0V. The drawing onthe right illustrates a method for programming a drain-side bit ofstorage cell #2 (Bit-D2), with a gate biased at −5V, a first dopedregion biased at 5V, a second doped region floating (F), a third dopedregion biased at 0V, and the P-well biased at 0V. In this example, theerased cell is populated with electrons and has a high Vt. The cell isprogrammed by band-to-band (BTB) hot hole tunneling to reduced theelectrons and achieve a low Vt. In both drawings, hot hole tunnelinglocation is marked by arrow and circle.

FIG. 7 is a simplified view diagram illustrating an exemplary biasing oftwo unselected nitride containing nonvolatile memory cells in an arrayaccording to an embodiment of the present invention. This diagram ismerely an example, which should not unduly limit the scope of the claimsherein. One of ordinary skill in the art would recognize othervariations, modifications, and alternatives. As shown, FIG. 7 issubstantially similar to FIG. 3, illustrating a reduced punch throughcondition in unselected cells. Note that the nitride containing storagemember is marked as O—N—O. The gate is biased at 0V or −Vg, the P-wellis biased at 0V, a first doped region is biased at 0V, a second dopedregion is floating, and a third doped region is biased at 5V. The dottedarrow indicates a punch through direction.

FIG. 7A is a simplified view diagram illustrating an exemplary methodfor inhibiting programming disturbance in an unselected nitridecontaining nonvolatile memory cell in an array according to anembodiment of the present invention. FIG. 7A shows part of a memoryarray 750 to illustrate a method for nitride containing nonvolatilememory cells. Here, the erased cell is populated with electrons and hasa high Vt. Bit B is being programmed by band-to-band hot hole tunnelingwhile programming is prohibited at Bit A (marked by “X”). The biasconditions are shown in FIG. 7A in which BL3=3V that reduces the lateralfield in cell A. Two of the doped regions are floating (marked by “F”).

FIG. 8 is a simplified view diagram illustrating a method for erasing anitride containing nonvolatile memory cell 800 according to anembodiment of the present invention. This diagram is merely an example,which should not unduly limit the scope of the claims herein. One ofordinary skill in the art would recognize other variations,modifications, and alternatives. As shown, to erase the electronstrapped in the nitride containing charge storage member 816 near dopedregion 811, a band-to-band tunneling (BTBT) condition is provided toinject hot holes (HH) to charge storage member. The biasing conditionincludes maintaining a ground potential at the substrate (p-well) 801,maintaining a floating potential at the second doped region 812,applying a gate voltage, e.g. −10 V to the first control gate 818through word line 806; and applying a drain voltage, e.g. 5 V, to thefirst doped region 811. In FIG. 8, the gate voltage −10 V is applied toa word line 806. A third doped region 813 is floating (marked by “F”).

FIG. 8A is a simplified view diagram illustrating a method for erasing anitride containing nonvolatile memory cell according to anotherembodiment of the present invention. In FIG. 8A, the gate is biased at−20V, and the P-well is biased at 0V. All doped regions are leftfloating (A). As shown, cell erase is accomplished by FN tunnelingelectrons into the charge storage material, in this case, the nitridecharge trapping material. As a result, an erased cell has a high Vt.

FIG. 9 is a simplified view diagram illustrating a method 900 forreading a nitride containing nonvolatile memory cell (900) according toan embodiment of the present invention. This diagram is merely anexample, which should not unduly limit the scope of the claims herein.One of ordinary skill in the art would recognize other variations,modifications, and alternatives. As shown, to read the nitridecontaining charge storage member 916 near doped region 911, the biasingcondition includes maintaining a ground potential at the substrate(p-well) 901, maintaining a ground potential at the first doped region911, applying a gate voltage, e.g. 5 V, to the first control gate 918through word line 906, and applying a read drain voltage, e.g. 1.6 V, tothe second doped region 912. The current provided at the second dopedregion 912 is related to injected electrons in a region of the storagemember 916 close to the first doped region 911. A third doped region 913is floating (marked by “F”).

Even though the above discussion is made in the context of n-type memorycells with n-type source and drain regions, the methods provided by theinvention can also be used in p-type devices. In some of the programmingmethods where hot electrons are used with n-type memory cells, hot holeswould be used with p-type memory cells. Therefore, the term “hotcarrier” will be understood to include hot electrons or hot holes. It isalso noted that in the methods discussed above, a ground potential isoften applied to the substrate. It is understood, however, thatdepending on the embodiment, another voltage could be applied. Forexample, a positive or negative voltage may help carrier injection ortunneling. Additionally, the memory cell operations methods discussedabove are applied to nonvolatile memory arrays having different arrayarchitectures presented below according to embodiments of the invention.As noted below, in some of the operation methods, an extended channelregion is provided by floating one or more doped regions between thesource and drain bias terminals which receive the applied bias voltages.The electric field is reduced in the extended channel region, and punchthrough currents are reduced.

In embodiments of the present invention, the memory cell structures andmethods associated therewith can be included in various integratedcircuits. In an embodiment of the invention, an integrated circuitcomprises a plurality of memory cells on a substrate and a circuit unitconfigured to perform various steps, including:

-   -   1. selecting a first memory cell, the selected memory cell        comprising a first doped region, a second doped region, a first        channel region therebetween, a first charge storage member        overlying the first channel region, and a first control gate        overlying the first charge storage member;    -   2. selecting a third doped region, the third doped region being        separated from the second doped region by at least a second        channel region, a second control gate overlying the second        channel region; and    -   3. applying a bias arrangement to program the first memory cell,        In a specific embodiment, the bias arrangement includes:    -   1. applying a substrate voltage to the substrate;    -   2. applying a first voltage to the first doped region;    -   3. applying a second voltage to the third doped region;    -   4. applying a third voltage to the first control gate and the        second control gate; and    -   5. floating the second doped region.

In an embodiment of the integrated circuit, the bias arrangement turnson the first channel region and the second channel region and injects afirst type of charges to the first charge storage member of the firstmemory cell. A specific example of this operation is channel hotelectron programming. In another embodiment, the steps further compriseerasing the selected memory cell by including

-   -   1. applying a fourth voltage to the substrate;    -   2. applying a fifth voltage to the first control gate; and    -   3. applying a sixth voltage to the first doped region,        whereby a second type of charges are injected to the first        charge storage member to erase the first memory cell. A specific        example of this operation is band-to-band tunneling of hot hole        erase described above. In another embodiment, the step further        comprise erasing the selected memory cell by including    -   1. applying a fourth voltage to the substrate; and    -   2. applying a fifth voltage to the first control gate,    -   3. whereby the first type of charges are removed from the first        charge storage member.        A specific example of this operation is Fowler-Nordham erase of        an NMOS cell. In yet another embodiment, the steps further        comprise erasing the selected memory cell by including:    -   1. applying a fourth voltage to the substrate; and    -   2. applying a fifth voltage to the first control gate,        whereby a second type of charges are injection from the        substrate to the first charge storage member. A specific example        of this operation is Fowler-Nordham erase of a PMOS cell.

In another embodiment of the integrated circuit, the bias arrangementinjects a first type of charges to the first charge storage member ofthe first memory cell and is insufficient to turn on the first channelregion. An example of this operation is band-to-band tunneling of hothole programming. In a specific embodiment, the steps further compriseerasing the selected memory cell by including:

-   -   1. applying a fourth voltage to the substrate; and    -   2. applying a fifth voltage to the first control gate,        whereby a second type of charges are injected from the first        gate to the first charge storage member of the first memory. In        another embodiment, the steps further comprise erasing the        selected memory cell by including:    -   1. applying a fourth voltage to the substrate; and    -   2. applying a fifth voltage to the first control gate, and    -   3. applying a sixth voltage to one of the first doped region and        the second doped region,    -   whereby a second type of charges are injected from the substrate        to the first charge storage member of the first memory.

In another embodiment, the steps further comprise erasing the selectedmemory cell by including:

-   -   1. applying a fourth voltage to the substrate; and    -   2. applying a fifth voltage to the first control gate, and    -   3. applying a sixth voltage to one of the first doped region and        the second doped region,        whereby the first type of charges are removed from the first        charge storage member of the first memory cell.

In another embodiment of the integrated circuit, the steps furthercomprise:

-   -   1. selecting a second memory cell adjacent to the first memory        cell, the second memory cell comprising the first doped region,        a fourth doped region, a third channel region therebetween, a        second charge storage member overlying the third channel region,        a third control gate overlying the third channel region; and    -   2. applying a fourth voltage to the fourth doped region, such        that the second charge storage member are free from being        programmed, wherein the fourth voltage is not more than the        first voltage.        An example of this operation is the programming inhibit        operation describe above.

In another embodiment of the integrated circuit, the third doped regionis separated from the second doped region by two or more channelregions, the bias arrangement further comprising:

-   -   1. applying the third voltage to the control gates overlying        each of the two or more channel regions to turn on each of the        two or more channel regions; and    -   2. floating the doped regions between each adjacent pair of the        two or more channel regions.

In another embodiment of the integrated circuit, each of the pluralityof memory cells is capable of holding multiple bits of information, thebias arrangement further comprising programming the memory cell until athreshold voltage of the memory cell is within a predetermined range ofa threshold voltage target.

In another embodiment of the integrated circuit, the steps furthercomprise reading the selected memory cell by including

-   -   1. applying a fourth voltage to the first doped region;    -   2. applying a fifth voltage to the second doped region, the        fifth voltage is less than the fourth voltage; and    -   3. applying a sixth voltage to the first control gate;        whereby a current served as an indication of the amount of        injected charges at least in a portion of the first charge        storage member is provided at the first doped region. An example        of this operation is the forward read described above.

In another embodiment of the integrated circuit, the steps furthercomprise reading the selected memory cell by including:

-   -   1. applying a fourth voltage to the first doped region;    -   2. applying a fifth voltage to the second doped region, wherein        the fourth voltage is less than the fifth voltage; and    -   3. applying a sixth voltage to the first control gate;        whereby a current served as an indication of the amount of        injected charges at least in a portion of the first charge        storage member is provided at the second doped region. An        example of this operation is the reverse read described above.

According to some embodiments of the present invention, the memory cellstructures and operation methods associated therewith can be used toform various memory arrays. Exemplary memory arrays and operationalmethods are illustrated in the examples below.

FIG. 10 is a simplified view diagram illustrating a nonvolatile memoryarray including isolation structures according to an embodiment of thepresent invention. This diagram is merely an example, which should notunduly limit the scope of the claims herein. One of ordinary skill inthe art would recognize other variations, modifications, andalternatives. As shown, nonvolatile memory array 1000 includes aplurality of isolation regions, such as 1001 and 1002. A first pluralityof nonvolatile memory cell pairs 1010 are located between a firstisolation region 1001 and a second isolation region 1002. Each memorycell pair includes two adjacent cells share a common doped region. Forexample, in array 1000, a first memory cell A and a second memory cell Bshare a common doped region 1023. In FIG. 10, memory cell pair A and Bincludes a first doped region 1021, a second doped region 1022, and acommon doped region 1023.

Depending on the embodiment, each memory cell can be one of the memorycells discussed above in connection with FIGS. 2A, 2B, and 3-9. Each ofthe nonvolatile memory cells may have a floating gate storage member ora nitride containing storage member. To simplify the figure, details ofthe memory cells are not shown in FIG. 10. For example, memory cell Aincludes a first channel region between the first doped region 1021 andthe common doped region 1023, a first charge storage member overlyingthe first channel region, and a first control gate overlying the firstcharge storage member. Memory cell B includes a second channel regionbetween the common doped region 1023 and the second doped region 1022, asecond charge storage member overlying the second channel region, and asecond control gate overlying the second charge storage member. Asshown, memory cells A and B are coupled by the common doped region 1023.

In memory cell array 1000, a first bit line 1031 is coupled to a firstdoped region of each of the first plurality of memory cell pairs, suchas a source/drain region 1021 of cell A. A second bit line 1032 iscoupled to a second doped region of each of the first plurality ofmemory cell pairs, such as a source/drain 1022 of cell B. The dopedregions are referred to as source/drain regions, because depending onthe embodiment, these regions can operate as either a source terminal ora drain terminal of the MOS transistor formed by the memory cells. Afirst common bit line 1033 is coupled to the common doped region of eachof the first plurality of memory cell pairs, such as 1023 shared by cellA and cell B. In the discussion below, the common doped region is alsoreferred to as the third doped region in the memory cell pair. Arraydevice 1000 also has a plurality of word lines. Each word line iscoupled to a first gate and a second gate of each of the first pluralityof memory cell pairs. For example, word line WL is coupled to the gateof cell A and the gate of cell B. Nonvolatile memory array 1000 also hasa first select line BLT1 coupled to a first switch 1035 which isconnected to the first bit line 1031. BLT1 is also coupled to a secondswitch 1036 coupled to the second bit line 1032.

As shown in FIG. 10, nonvolatile memory array 1000 also includes asecond plurality of nonvolatile memory cell pairs 1040 located between athird isolation region 1003 and the second isolation region 1002. Eachof the second plurality of memory cell pairs 1040 includes a firstmemory cell and a second memory cell sharing a common doped region,similar to 1010 described above. A third bit line is 1041 coupled to afirst doped region of each of the second plurality of memory cell pairs1040. A fourth bit line 1042 is coupled to a second doped region of eachof the second plurality of memory cell pairs 1040. A second common bitline 1043 is coupled to the common doped region of each of the secondplurality of memory cell pairs 1040. A second select line BLT2 iscoupled to a third switch 1045 connected to the third bit line 1041 andto a fourth switch 1046 connected to the fourth bit line 1042.

In a specific embodiment, the nonvolatile memory array 1000 alsoincludes a common (third) select line BLB coupled to the fifth switch1037 which is connected to the first common bit line 1033 and coupled toa sixth switch 1047 which is connected to the second common bit line1043. In FIG. 10, the nonvolatile memory array 1000 also includes afirst global bit line BL1 coupled to the first bit line 1031 via thefirst switch 1035. A second global bit line BL2 is coupled to the secondbit line 1032 via the second switch 1036.

FIG. 11 is a simplified view diagram illustrating another nonvolatilememory array 1100 including isolation structures according to anotherembodiment of the present invention. Memory array 1100 is similar tomemory array 1000, but has a different arrangement for the common bitlines and the common select line. As shown, a common select line BLB iscoupled to a switch 1057. Switch 1057 is connected to multiple commonbit lines, such as common bit line 1033 and common bit line 1043.

The memory cell operations methods discussed above in connection withFIGS. 2A, 2B, and 3-9 can be applied to nonvolatile memory arrays havingdifferent array architectures according to embodiments of the invention.As noted below, in some of the operation methods, an extended channelregion is provided by floating one or more doped regions between thesource and drain bias terminals which receive the applied bias voltages.The electric field is reduced in the extended channel region, and punchthrough currents are reduced.

Various memory array architectures and operations are now discussedbelow. It is noted that in the examples to follow, the memory cells caninclude floating gate or nitride in the charge storage member. Thememory cells are connected in different arrays using bit lines and wordlines. Additionally, various voltage sources are coupled to the bitlines and/or word lines through switch devices controlled by selectlines. As shown below, during operation, different voltages are appliedto bit lines and word lines, so that the terminals of the memory cellscan be set at the potentials required for the different operations.Under some conditions, potentials of the select lines are raised orlowered to turn on or turn off the switch devices to allow the propervoltages to be applied to the memory cell terminals.

According to embodiments of the invention, each of the memory cells canbe a multilevel memory cell. In other words, each memory cell is capableof holding multiple bits of information. For multilevel operation, thememory cell includes multiple threshold voltage targets. The programmingmethod includes programming the memory cell until the threshold voltageof the memory cell is within a predetermined range of a predeterminedthreshold voltage target.

It is understood that in the operation methods discussed below, thememory cells operate like NMOS transistors, i.e., having n-typesource/drain and a p-well. In alternative embodiments, memory cellsconfigured like PMOS transistors can also be used, and the biasedvoltages will be adjusted accordingly.

It is noted that in the examples discussed below, the switch devices areNMOS transistors. Therefore, the potential on a corresponding selectline coupled to the NMOS is raised to turn on the switch. Conversely,the potential on the select line is lowered to turn off the NMOS switch.It is understood that other switch device can also be used, and selectline potentials are adjusted accordingly. For example, a PMOS transistorcan be used as a switch. In that case, the potential of the select lineis lowered to turn on the PMOS switch and raised to turn off the PMOSswitch.

Accordingly, in the discussion below, “turning on” a select line isunderstood to mean that an appropriate voltage is applied to the selectline to turn on the switch devices connected to the select line.Similarly, “turning off” a select line is understood to mean that anappropriate voltage is applied to the select line to turn off the switchdevices connected to the select line.

Depending on the embodiment, the memory cells can be floating gate basednonvolatile cells or nitride based nonvolatile cells. For floating gatebased cells, the cell bias conditions for operations such asprogramming, reading, and erasing, are similar to the methods describedin connection with FIGS. 2A, 2B, and 3-5. For nitride based cells, thecell bias conditions for operations such as programming, reading, anderasing, are similar to the methods described in connection with FIGS.2A, 2B, and 6-9. In memory array 1000, these cell bias conditions areset up by applying appropriate voltages to the word lines, global bitlines, and select lines. A specific example is listed in Table 1 anddiscussed in further details below.

TABLE 1 BL1 BL2 WL BLT2 BLT1 BLB P-well Un-selected WL Program A cell(CHE) 5 V 0 V 10 V 0 V 10 V 0 V 0 V 0 V OR −Vg Program B cell (CHE) 0 V5 V 10 V 0 V 10 V 0 V 0 V 0 V OR −Vg Erase A and B 5 V 5 V −10 V 0 V 10V 0 V 0 V BTBT HH for Nitride cell) Erase (−FN for FG cell) F F −20 V 0V  0 V 0 V 0 V Read A cell 0.6 V  F 5 V 0 V 10 V 10 V  0 V 0 V OR −VgRead B cell F 0.6 V  5 V 0 V 10 V 10 V  0 V 0 V OR −Vg

According to a specific embodiment, a method for programming a cell inarray 1000, e.g. cell A, can be briefly summarized below with referenceto FIG. 10.

-   -   1. Apply a first voltage (e.g. 5V) to a first global bit line        (BL1);    -   2. Apply a second voltage (e.g. 0V) to a second global bit line        (BL2);    -   3. Turn on a first select line (e.g. apply 10V to BLT1) to        couple the first global bit line (BL1) to the first doped region        (1021) of the first memory cell (A) and to couple the second        global bit line (BL2) to the second doped region (1022);    -   4. Turn off a second select line (e.g. apply 0V to BLT2) to        decouple the first global bit line (BL1) and the second global        bit line (BL2) from a second plurality of memory cells (1040);    -   5. Turn off a third select line (e.g. apply 0V to BLB) to        electrically float a common bit line (1033) coupled to the third        (common) doped region; and    -   6. Apply a third voltage (e.g. 10V) to a word line (WL) coupled        to the control gate of the first memory cell A, and the second        memory cell B that turn-on the channel between 1021 and 1023,        and channel between 1023 and 1022.

In the method discussed above, the substrate of the memory cell array isconnected to a ground potential. The bias condition in cell A and cell Bincludes 5V at the drain 1021, 10V at their gates through word line WL,0V at source 1022, with doped region 1023 floating. Such bias conditionscause channel hot electrons (CHE) to be injected into a charge storagelayer of memory cell A. In an embodiment, the unselected word lines arebiased at 0V or at a negative gate voltage to reduce the punchthroughleakage of the unselected memory cells.

In a specific embodiment, to reduce disturb conditions in unselectedcells, the programming method also includes applying a ground ornegative potential to word lines not coupled to the first memory cell.In another embodiment, the memory cell is capable of holding multiplebits of information, and the programming method for multilevel operationincludes programming the memory cell until a threshold voltage of thememory cell is within a predetermined range of a predetermined thresholdvoltage target.

In an embodiment, the first memory cell in array 1000 has a dielectriccharge trapping material, e.g., a nitride based charge storage material.A method for erasing the first memory cell A but not the memory cell Bcan be briefly summarized below.

-   -   1. applying a fourth voltage (e.g. 5V) to the first global bit        line (BL1);    -   2. applying a fifth voltage (e.g. 0V) to the second global bit        line (BL2);    -   3. turning on a first select line (e.g. apply 10V to BLT1) to        couple the first global bit line (BL1) to the first doped region        (1021) of the first memory cell (A) and to couple the second        global bit line (BL2) to the second doped region (1022);    -   4. turning off a third select line (e.g. apply 0V to BLB) to        electrically float a common bit line (1033) coupled to the third        (common) doped region; and    -   5. applying a sixth voltage (e.g. −10V) to the word line (WL)        coupled to the control gate of the first memory cell.    -   In the method discussed above, the substrate of the memory cell        array is connected to a ground potential. The bias condition in        cell A and cell B includes 5V at the drain 1021, −10V at their        gates through word line WL, 0V at source 1022, with doped region        1023 floating. Such bias conditions cause band-to-band tunneling        induced hot holes (BTBT HH) to be injected into a charge storage        layer of memory cell A but not into a charge storage layer of        memory cell B. The electrons originally were present in the        nitride charge storage material can now be neutralized, and cell        A is erased.

In an embodiment, where the first and the second memory cells in array1000 includes a dielectric charge trapping material, e.g., a nitridebased charge storage material, the method for erasing the first memorycell A and the second memory cell B can be briefly summarized below.

-   -   1. applying a fourth voltage (e.g. 5V) to the first global bit        line (BL1);    -   2. applying a fifth voltage (e.g. 5V) to the second global bit        line (BL2);    -   3. turning on a first select line (e.g. apply 10V to BLT1) to        couple the first global bit line (BL1) to the first doped region        (1021) of the first memory cell (A) and to couple the second        global bit line (BL2) to the second doped region (1022);    -   4. turning off a third select line (e.g. apply 0V to BLB) to        electrically float a common bit line (1033) coupled to the third        (common) doped region; and    -   5. applying a sixth voltage (e.g. −10V) to the word line (WL)        coupled to the control gate of the first memory cell A and the        second memory cell B.

In the method discussed above, the bias condition in cell A and cell Bincludes 5V at the drain 1021, −10V at their gates through word line WL,5V at source 1022, with doped region 1023 floating. Such bias conditionscause band-to-band tunneling induced hot holes to be injected into acharge storage layer of memory cell A and cell B. The electronsoriginally were present in the nitride charge storage material can nowbe neutralized, and cell A cell B are erased.

In another embodiment, wherein the first memory cell of memory array1000 includes a floating gate based charge storage layer. A method forerasing the first memory cell can be briefly summarized below.

-   -   1. floating the first global bit line (BL1);    -   2. floating the second global bit line (BL2);    -   3. turning off the first select line (BLT1) to decouple the        first global bit line to electrically float the first doped        region (1021) of the first memory cell and to decouple the        second global bit line to electrically float the second doped        region (1022);    -   4. turning off the third select line (BLB) to electrically float        a common bit line coupled to the third doped region (1023);    -   5. applying a seventh voltage to the word line (WL) coupled to        the control gate of the first memory cell; and    -   6. applying an eight voltage (0V) to the substrate;

In the method discussed above, the substrate of the memory cell array isconnected to a ground potential. Cell A is biased at −20V at its gatethrough word line WL, and the substrate is at 0V. Such bias conditionscause electrons to be removed from the floating gate charge storagelayer of the first memory cell by Fowler-Nordheim (FN) tunneling. Cell Acan then be erased.

In yet another embodiment, a method of reading the first memory cell Ain array 1000 can be briefly summarized below.

-   -   1. applying a ninth voltage (e.g. 0.6V) to the first global bit        line;    -   2. floating the second global bit line;    -   3. turning off a second select line (BLT2) to decouple the first        global bit line and the second global bit line from a second        plurality of memory cells;    -   4. turning on a first select line (BLT1) to couple the first        global bit line to the first doped drain of the first memory        cell and to couple the second global bit line to the second        doped region;    -   5. turning on the third select line (BLB) to electrically ground        (e.g. apply 0V to) a common bit line coupled to the third doped        region; and    -   6. applying a tenth voltage (e.g. 5V) to the word line coupled        to the control gate of the first memory cell A.        The substrate of the memory cell array is connected to a ground        potential. Under these bias conditions, a current provided at        the first global bit line is associated with a threshold voltage        of the first memory cell.

In the method discussed above, cell A is biased at 5V at its gatethrough word line WL, 0.6V at its drain 1021, and 0V at its source 1023.Under such bias conditions, a current provided at the first bit line isassociated with a threshold voltage of cell A. By measure the currentpresent in bit line 1031, cell A can be read.

It is noted that methods for programming and reading cell A in array1000 are discusses in detail above. Similar method can be used toprogram or read cell B in array 1000, by reversing the bias voltages onBL1 and BL2, as shown in Table 1 above.

In an alternative embodiment of the invention, arrays 1000 and 1100 canbe implemented using memory cells that are operated by band-to-band hothole program to low Vt and FN tunneling erase to high Vt. Table 1A belowsummaries the various bias conditions. The detailed operations aresimilar to the discussion above in connection with Table 1.

TABLE 1A BL1 BL2 WL BLT2 BLT1 BLB P-well Un-selected WL Program A cell 5V 0 V −5 V 0 V 10 V  0 V 0 V 0 V or −Vg Program B cell 0 V 5 V −5 V 0 V10 V  0 V 0 V 0 V or −Vg Erase (−FN All) for SiN F F −20 V 0 V  0 V  0 V0 V −20 V Erase (+FN All) for FG 0 V 0 V 20 V 10 V  10 V 10 V 0 V   20 VRead A cell 0.6 V  F 5 V 0 V 10 V 10 V 0 V 0 V or −Vg Read B cell F 0.6V  5 V 0 V 10 V 10 V 0 V 0 V or −Vg

FIG. 12 is a simplified view diagram illustrating a virtual groundnonvolatile memory array 1200 according to an embodiment of the presentinvention. As shown, memory array 1200 includes a plurality ofnonvolatile memory cells arranged in rows and columns. Each of pluralityof word lines are coupled to memory cells in a row. A first word line(WL) is coupled to eight memory cells, each of the memory cellsdesignated as the Nth memory cell, where N=1 to 8. Each memory cell hastwo doped regions and a channel regions therebetween. In FIG. 12, thememory cells are shown as 1, 2, . . . , 8, and the doped regions areshown as 1201, 1202, . . . , 1208. Each pair of adjacent memory cellsare coupled by a common doped region. For example, cell 2 has dopedregions 1202 and 1203, and cell 3 has doped regions 1203 and 1204. Cell2 and cell 3 are coupled by the common doped regions 1203. Depending onthe embodiment, each doped region can function either as a drain regionor a source region during a cell operation. Further, each memory cellhas a charge storage material (not shown) which can be floating gatebased charge storage material discussed above in conjunction with FIGS.3-5, a dielectric charge trapping material, e.g., nitride based chargestorage material discussed above in conjunction with FIGS. 6-9, or othertypes of charge storage material.

Memory array 1200 also includes a plurality of bit lines 1211-1218, eachbit line designated as the Nth bit line, where N=1 to 8. The Nth bitline is coupled to a doped region shared by the Nth memory cell and anadjacent memory cell. For example, bit line 1212 is the second bit line,which is coupled to doped region 1202 shared between cell 1 and cell 2.

Memory array 1200 also includes four global bit lines which are coupledto eight bit lines through switches controlled by select lines. Asshown, a first global bit line (BL1) is coupled to the first bit line1211 and the fifth bit line 1215. A second global bit line (BL2) iscoupled to the third bit line 1213 and the seventh bit line 1217. Athird global bit line S1 is coupled to the second bit line 1212 and thesixth bit line 1216. A fourth global bit line S2 is coupled to thefourth bit line 1214 and the eighth bit line 1218.

In memory array 1200, six select lines and eight switches are providedfor coupling the global bit lines and the local bit lines 1211-1218. Afirst select line BLT1 couples the first global bit line BL1 to thefirst bit line 1211 via a first switch 1221. Similarly, a second selectline BLT2 couples the second global bit line BL2 to the third bit line1213 via a second switch 1222. A third select line BLT3 couples thefirst global bit line BL1 to the fifth bit line 1215 via a third switch1223. A fourth select line BLT4 couples the second global bit line BL2to the seventh bit line 1217 via a fourth switch 1224. A fifth selectline BLB1 coupling the third global bit line S1 to the second bit line1212 via a fifth switch 1225. The fifth select line BLB1 also couplesthe third global bit line S1 to the sixth bit line 1216 via a sixthswitch 1226. Additionally, a sixth select line BLB2 couples the fourthglobal bit line S2 to the fourth bit line 1214 via a seventh switch1227. The sixth select line BLB2 also couples the fourth global bit lineS2 to the eighth bit line 1218 via an eighth switch 1228.

Depending on the embodiment, the memory cells can be floating gate basednonvolatile cells or nitride based nonvolatile cells. For floating gatebased cells, the cell bias conditions for operations such asprogramming, reading, and erasing, are similar to the methods describedin connection with FIGS. 2A, 2B, and 3-5. For nitride based cells, thecell bias conditions for operations such as programming, reading, anderasing, are similar to the methods described in connection with FIGS.2A, 2B, and 6-9.

In memory array 1200, these cell bias conditions are set up by applyingappropriate voltages to the word lines, global bit lines, and selectlines. A specific example is listed in Table 2 and discussed in furtherdetails below.

TABLE 2 BL1 BL2 S1 S2 WL BLT1 BLT2 BLT3 BLT4 BLB1 BLB2 P-wellUn-selected WL Program cellA (CHE) 0 V 5 V 0 V 0 V   10 V 10 V 10 V 0 V0 V 0 V 0 V 0 V 0 V or −Vg Erase (BTBT HH 0 V 5 V 0 V 0 V −10 V 10 V 10V 0 V 0 V 0 V 0 V 0 V for nitride cell) Erase (−FN for FG cell) F F F F−20 V  0 V  0 V 0 V 0 V 0 V 0 V 0 V Read cellA F 0.6 V  0 V 0 V  5 V  0V 10 V 0 V 0 V 10 V  0 V 0 V 0 V or −Vg

According to embodiments of the invention, various operation methods areprovided for memory array 1200. A method of programming a memory cellcan be briefly summarized below.

-   -   1. selecting a first nonvolatile memory cell (e.g. cell 2,        marked as cell A) and a second memory cell (e.g. cell 1) from        the plurality of nonvolatile memory cells in array 1200. The        first memory cell (cell 2) includes a first doped region 1203, a        second doped region 1202, and a channel region therebetween. The        second memory cell (cell 1) includes the second doped region        1202 and a third doped region 1201;    -   2. applying a first voltage (e.g. 0V) to a first global bit line        (BL1);    -   3. applying a second voltage (e.g. 5V) to a second global bit        line (BL2);    -   4. applying a ground voltage (e.g. 0V) to a third global bit        line and a fourth global bit line;    -   5. turning on a first select line BLT1 coupled to a first bit        line switch 1221 to couple the first global bit line BL1 to the        third doped region 1201;    -   6. turning on a second select line BLT2 coupled to a second bit        line switch 1222 to couple the second global bit line BL2 to the        first doped region 1203;    -   7. turning off a third select line BLT3 coupled to a third bit        line switch 1223 to decouple the first global bit line BL1 from        a fifth bit line;    -   8. turning off a fourth select line BLT4 coupled to a fourth bit        line switch 1224 to decouple the second global bit line BL2 from        a seventh bit line;    -   9. turning off a fifth select line BLB1 coupled to a fifth bit        line switch (1225) to electrically decouple the third global bit        line S1 from the second doped region 1202 of the first memory        cell and to electrically float the second doped region, the        third global bit line is also decoupled from the sixth bit line;    -   10. turning off a sixth select line BLB2 to electrically        decouple the fourth global bit line from a fourth bit line and        an eighth bit line; and    -   11. applying a third voltage (e.g. 10V) to a word line (WL)        coupled to the control gates of the memory cell 2 and memory        cell 1.

In the method discussed above, the substrate of the memory cell array isconnected to a ground potential. 10V is applied at the gates of cell 2and cell 1, 5V at drain 1203 of cell 2, doped region 1022 is floating,the channels of cell 2 and cell 1 are turned on, and the source 1201 ofcell 1 is at 0V. Under such bias conditions, channel hot electrons (CHE)are injected into a charge storage layer of t memory cell 2 to programcell 2.

In an embodiment, where the first memory cell in array 1200 includes adielectric charge trapping material, e.g., a nitride based chargestorage material, the method for erasing the first memory cell can bebriefly summarized below.

-   -   1. selecting a first nonvolatile memory cell (e.g. cell 2) and a        second memory cell (e.g. cell 1) from the plurality of        nonvolatile memory cells 1200. Memory cell 2 includes a first        doped region 1203, a second doped region 1202, and a channel        region therebetween. The second memory cell (cell 1) includes        the second doped region 1202 and a third doped region 1201;    -   2. applying a first voltage (e.g. 0V) to a first global bit line        (BL1);    -   3. applying a second voltage (e.g. 5V) to a second global bit        line (BL2);    -   4. applying a ground voltage (e.g. 0V) to a third global bit        line and a fourth global bit line;    -   5. turning on a first select line BLT1 coupled to a first bit        line switch 1221 to couple the first global bit line BL1 to the        third doped region 1201;    -   6. turning on a second select line BLT2 coupled to a second bit        line switch 1222 to couple the second global bit line BL2 to the        first doped region 1203;    -   7. turning off a third select line BLT3 coupled to a third bit        line switch 1223 to decouple the first global bit line BL1 from        a fifth bit line;    -   8. turning off a fourth select line BLT4 coupled to a fourth bit        line switch 1224 to decouple the second global bit line BL2 from        a seventh bit line;    -   9. turning off a fifth select line BLB1 coupled to a fifth bit        line switch (1225) to electrically decouple the third global bit        line S1 from the second doped region of the first memory cell        and to electrically float the second doped region, the third        global bit line is also decoupled from the sixth bit line;    -   10. turning off a sixth select line BLB2 to electrically        decouple the fourth global bit line S2 from a fourth bit line        and an eighth bit line; and    -   11. applying a third voltage (e.g. −10V) to a word line (WL)        coupled to the control gates of the memory cell 2.

The substrate of the memory cell array is connected to a groundpotential. Under these bias conditions, charged carriers are injectedinto a charge storage layer of the first memory cell by band-to-bandtunneling induced hot hole injection (BTBT HH). The first memory cell(cell 2) is erased.

In an embodiment, where the first memory cell in array 1200 includes afloating gate charge storage material, the method for erasing the firstmemory cell can be briefly summarized below.

-   -   1. selecting a first nonvolatile memory cell (e.g. cell 2) and a        second memory cell (e.g. cell 2) from the plurality of        nonvolatile memory cells 1200. Memory cell 2 including a first        doped region 1203, a second doped region 1202, and a channel        region therebetween. The second memory cell (cell 2) includes        the second doped region 1202 and a third doped region 1201);    -   2. floating a first global bit line (BL1);    -   3. floating a second global bit line (BL2);    -   4. floating a third global bit line and a fourth global bit        line;    -   5. turning off a first select line BLT1 coupled to a first bit        line switch 1221 to decouple the first global bit line BL1 from        the third doped region 1201;    -   6. turning off a second select line BLT2 coupled to a second bit        line switch 1222 to decouple the second global bit line BL2 from        the first doped region 1203;    -   7. turning off a third select line BLT3 coupled to a third bit        line switch 1223 to decouple the first global bit line BL1 from        a fifth bit line;    -   8. turning off a fourth select line BLT4 coupled to a fourth bit        line switch 1224 to decouple the second global bit line BL2 from        a seventh bit line;    -   9. turning off a fifth select line BLB1 coupled to a fifth bit        line switch 1225 to electrically decouple the third global bit        line S1 from the second doped region of the first memory cell        and to electrically float the second doped region, the third        global bit line is also decoupled from the sixth bit line;    -   10. turning off a sixth select line BLB2 to electrically        decouple the fourth global bit line from a fourth bit line and        an eighth bit line;    -   11. applying a voltage (e.g. −20V) to a word line (WL) coupled        to the control gates of the memory cell 2; and    -   12. applying a voltage (e.g. 0V) to the substrate;    -   Under such bias conditions, charged carriers are removed from        floating gate by Fowler-Nordheim (FN) tunneling, thus erase the        first memory cell.

In an embodiment, where the first memory cell in array 1200 includes adielectric charge trapping material, e.g., a nitride based chargestorage material, the method for read the first memory cell can bebriefly summarized below.

-   -   1. selecting a first nonvolatile memory cell (e.g. cell 2).        Memory cell 2 including a first doped region 1203, a second        doped region 1202, and a channel region therebetween;    -   2. floating a first global bit line (BL1);    -   3. applying a first voltage (e.g. 0.6V) to a second global bit        line (BL2);    -   4. applying a ground voltage (e.g. 0V) to a third global bit        line and a fourth global bit line;    -   5. turning off a first select line BLT1 coupled to a first bit        line switch 1221 to decouple the first global bit line BL1 from        the third doped region 1201;    -   6. turning on a second select line BLT2 coupled to a second bit        line switch 1222 to couple the second global bit line BL2 to the        first doped region 1203;    -   7. turning off a third select line BLT3 coupled to a third bit        line switch 1223 to decouple the first global bit line BL1 from        a fifth bit line;    -   8. turning off a fourth select line BLT4 coupled to a fourth bit        line switch 1224 to decouple the second global bit line BL2 from        a seventh bit line;    -   9. turning on a fifth select line BLB1 coupled to a fifth bit        line switch 1225 to electrically couple the third global bit        line S1 to the second doped region of the first memory cell, the        fifth global bit line is also coupled to the sixth bit line;    -   10. turning off a sixth select line BLB2 to electrically        decouple the fourth global bit line from a fourth bit line and        an eighth bit line; and    -   11. applying a second voltage (e.g. 5V) to a word line (WL)        coupled to the control gates of the memory cell 2.    -   The substrate of the memory cell array is connected to a ground        potential. Under such bias conditions, a current provided at the        second global bit line is associated with a threshold voltage of        the first memory cell 2.

In an alternative embodiment of the invention, array 1200 can beimplemented using memory cells that are operated by band-to-band hothole program to low Vt and FN tunneling erase to high Vt. Table 2A belowsummaries the various bias conditions. The detailed operations aresimilar to the discussion above in connection with Table 2.

TABLE 2A BL1 BL2 S1 S2 WL BLT1 BLT2 BLT3 BLT4 BLB1 BLB2 P-wellUn-selected WL Program cell A/ 0 V 5 V 0 V 3 V −5 V 10 V 10 V 0 V 0 V  0V 10 V 0 V 0 V or −Vg inhibit cell B Erase (−FN All) for SiN F F F F −20V    0 V  0 V 0 V 0 V  0 V  0 V 0 V −20 V Erase (+FN All) for FG 0 V 0 V0 V 0 V 20 V 10 V 10 V 10 V  10 V  10 V 10 V 0 V +20 V Read cellA F 0.6V  0 V 0 V  5 V  0 V 10 V 0 V 0 V 10 V  0 V 0 V 0 V or −Vg

FIG. 13 is a simplified view diagram illustrating another virtual groundnonvolatile memory array 1300 according to an alternative embodiment ofthe present invention. This diagram is merely an example, which shouldnot unduly limit the scope of the claims herein. One of ordinary skillin the art would recognize other variations, modifications, andalternatives. As shown, memory array 1300 includes a plurality ofnonvolatile memory cells arranged in rows and columns. Each of pluralityof word lines are coupled to memory cells in a row. A first word line(WL) is coupled to eight memory cells, each of the memory cellsdesignated as the Nth memory cell, where N=1 to 8. Each memory cell hastwo doped regions and a channel regions therebetween. In FIG. 13, thememory cells are shown as 1, 2, . . . , 8, and the doped regions areshown as 1301, 1302, . . . , 1308. Each pair of adjacent memory cellssharing a common doped region. For example, cell 3 has doped regions1303 and 1304, and cell 3 and cell 4 share the common doped regions1304. Depending on the embodiment, each doped region can function eitheras a drain region or a source region during a cell operation. Further,each memory cell has a charge storage material (not shown) which can befloating gate based charge storage material discussed above inconjunction with FIGS. 3-5, a dielectric charge trapping material, e.g.,nitride based charge storage material discussed above in conjunctionwith FIGS. 6-9, or other types of charge storage material.

Memory array 1300 also includes a plurality of bit lines 1311-1318, eachbit line designated as the Nth bit line, where N=1 to 8. The Nth bitline is coupled to a doped region shared by the Nth memory cell and anadjacent memory cell. For example, bit line 1312 is the second bit line,which is coupled to doped region 1302 shared between cell 1 and cell 2.

Memory array 1300 also includes four global bit lines which are coupledto eight bit lines through switches controlled by select lines. A firstglobal bit line (BL1) is coupled to the first bit line 1311 and thefifth bit line 1315. A third global bit line (BL3) is coupled to thethird bit line 1313 and the seventh bit line 1317. A second global bitline BL2 is coupled to the second bit line 1312 and the sixth bit line1316. A fourth global bit line BL4 is coupled to the fourth bit line1314 and the eighth bit line 1318.

In memory array 1300, eight select lines and eight select switches areprovided for coupling the global bit lines and the local bit lines1311-1318. A first select line BLT1 couples the first global bit lineBL1 to the first bit line 1311 via a first switch 1321. Similarly, asecond select line BLT2 couples the third global bit line BL3 to thethird bit line 1313 via a line switch 1322. A third select line BLT3couples the first global bit line BL1 to the fifth bit line 1315 via athird switch 1323. A fourth select line BLT4 couples the third globalbit line BL3 to the seventh bit line 1317 via a fourth switch 1324. Afifth select line BLB1 coupling the second global bit line BL2 to thesecond bit line 1312 via a fifth switch 1325. The sixth select line BLB2couples the fourth global bit line BL4 to the fourth bit line 1314 via asixth switch 1326. A seventh select line BLB3 couples the second globalbit line BL2 to the sixth bit line 1316 via a seventh switch 1327.Additionally, an eighth select line BLB4 couples the fourth global bitline BL4 to the eighth bit line 1318 via an eighth switch 1328.

Depending on the embodiment, the memory cells can be floating gate basednonvolatile cells or nitride based nonvolatile cells. For floating gatebased cells, the cell bias conditions for operations such asprogramming, reading, and erasing, are similar to the methods describedin connection with FIGS. 2A, 2B, and 3-5. For nitride based cells, thecell bias conditions for operations such as programming, reading, anderasing, are similar to the methods described in connection with FIGS.2A, 2B, and 6-9. In memory array 1300, these cell bias conditions areset up by applying appropriate voltages to the word lines, global bitlines, and select lines. A specific example is listed in Table 3 anddiscussed in further details below.

TABLE 3 BL1 BL2 BL3 BL4 WL P-well Un-selected WL Program BitA (CHE) 0 VF 5 V F 10 V 0 V 0 V or −Vg Program BitB (CHE) F 0 V F 5 V 10 V 0 V 0 Vor −Vg Erase (BTBT HH for Nitride cell)) 5 V 5 V 5 V 5 V −10 V 0 V Erase(−FN for FG cell) F F F F −20 V 0 V Read BitA (reverse read) F F 0 V 1.6V  5 V 0 V 0 V or −Vg Read BitB (reverse read) F F 1.6 V  0 V 5 V 0 V 0V or −Vg BLT1 BLT2 BLT3 BLT4 BLB1 BLB2 BLB3 BLB4 Program BitA 0 V 10 V10 V  0 V 0 V  0 V 0 V 0 V Program BitB 0 V  0 V 0 V 0 V 10 V  10 V 0 V0 V Erase (BTBT HH for Nitride cell)) 10 V  10 V 10 V  10 V  10 V  10 V10 V  10 V  Erase (−FN for FG cell) 0 V  0 V 0 V 0 V 0 V  0 V 0 V 0 VRead BitA (reverse read) 0 V 10 V 0 V 0 V 0 V 10 V 0 V 0 V Read BitB(reverse read) 0 V 10 V 0 V 0 V 0 V 10 V 0 V 0 V

In an embodiment, each memory cell in array 1300 includes a dielectriccharge trapping material, e.g., a nitride based charge storage materialand two bit of information can be programmed into the memory cell. Thisis indicated in FIG. 13 as A and B in cell 3. Using bit A of cell 3 asan example, method of programming a memory cell can be brieflysummarized below.

-   -   1. selecting a second memory cell (cell 4), the second memory        cell including the second doped region 1304 and a third doped        region 1305. Cell 4 includes a second channel region between the        second doped region and the third doped region.    -   2. applying a first voltage (e.g. 0V) to a first global bit line        BL1;    -   3. floating a second global bit line BL2;    -   4. applying a second voltage (e.g. 5V) to a third global bit        line BL3;    -   5. floating a fourth global bit line BL4;    -   6. applying a third voltage to a word line WL coupled to a        control gate of the first memory cell (cell 3) and the second        memory cell (cell 4) that turn on both the first cell (cell 3)        and the second cell (cell 4)    -   7. turning off a first select line BLT1 to decouple the first        global bit line BL1 from a first bit line 1311;    -   8. turning on a second select line BLT2 to couple the third        global bit line to the first doped region 1303;    -   9. turning on a third select line BLT3 to couple the first        global bit line BL1 to the third doped region 1305;    -   10. turning off a fourth select line BLT4 to decouple the third        global bit line from a seventh bit line;    -   11. turning off a fifth select line BLB1 to decouple the second        global bit line BL2 from a second bit line;    -   12. turning off a sixth select line BLB2 to decouple the fourth        global bit line BL4 from a fourth bit line 1314;    -   13. turning off a seventh select line BLB3 to decouple the        second global bit line BL2 from a sixth bit line 1316; and    -   14. turning off an eighth select line BLB4 to decouple the        fourth global bit line BL4 from a eighth bit line 1318.

In the method discussed above, cell 3 receives bias voltages similar todescribed in the programming method discussed above in connection withFIG. 6, and unselected memory cells are biased to reduce punch throughcurrent, similar to descried in FIG. 7. In this particular example, thefirst doped region 1303 is coupled to 5V, the second doped region 1304is floating, the third doped region 1305 is coupled to 0V, the controlgates of cell 3 and cell 4 are coupled to 10V. Under these biasconditions, channel hot electrons (CHE) are injected into the firstcharge storage region A of memory cell 3.

In another example, bit B of cell 3 can be programmed using a similarmethod. As shown in Table 3. To program bit B of cell 3, BL1 and BL3 arefloating, 0V is applied to BL2, 5V is applied to BL4, and 10V is appliedto WL. Additionally, select lines BLB1 and BLB2 are turned on, and theother select lines are turned off.

In an embodiment, where each memory cell in array 1300 includes adielectric charge trapping material, e.g., a nitride based chargestorage material, the method for erasing each memory cell on theselected wordline can be briefly summarized below.

-   -   1. applying a fourth voltage to the selected word line coupled        to a control gate of each memory cell on the wordline;    -   2. applying a fifth voltage to the substrate;    -   3. applying a sixth voltage to the first, the second, the third,        and the fourth global bit lines; and    -   4. turning on the first through the eighth select lines to        couple the sixth voltage to doped regions in each of the memory        cells,        Under these bias conditions, charged carriers are injected into        a charge storage layer of each memory cell by band-to-band        tunneling induced hot hole (BTBT HH) injection to erase each        memory cell.

In an embodiment, where the first memory cell in array 1300 includes afloating gate charge storage material, the method for erasing the firstmemory cell can be briefly summarized below.

-   -   1. applying a seventh voltage to the word line coupled to a        control gate of the first memory cell;    -   2. applying an eighth voltage to the substrate;    -   3. floating the first, the second, the third, and the fourth        global bit lines; and    -   4. turning off the first through the eighth select lines to        decouple first through the fourth global bit lines from the        first through the eighth bit lines, respectively, and to float        the doped regions in each of the memory cells.        Under these bias conditions, charged carriers are removed from        the floating gate by Fowler-Nordheim (FN) tunneling to erase the        first memory cell.

In an embodiment, where the first memory cell in array 1200 includes adielectric charge trapping material, e.g., a nitride based chargestorage material, the method for read the first memory cell can bebriefly summarized below.

-   -   1. applying a ninth voltage to the third global bit line;    -   2. applying a tenth voltage to the fourth global bit line;    -   3. floating the first and the second global bit lines;    -   4. turning on the second select line couple the third global bit        line to the third bit line and to couple the ninth voltage the        first doped region;    -   5. turning on the sixth select line to couple the fourth global        bit line to the fourth bit line and to couple the tenth voltage        to the second doped region;    -   6. applying an eleventh voltage to the word line coupled to a        control gate of the first memory cell;    -   7. turning off the first, the third, the fourth, the fifth, the        seventh, and the eighth select lines.

Under the bias conditions described above and Table 3, memory cell 3receives 1.6V at its drain 1304, 5V at its gate, and a ground potentialat its source 1303. Under such bias conditions, a current provided atbit line 1314 is an indication of a threshold voltage of bit A. It isnoted that bit B can be read following a similar method, with 1.6V onBL3 and 0V on BL4.

In an alternative embodiment of the invention, array 1300 can beimplemented using memory cells that are operated by band-to-band hothole program to low Vt and FN tunneling erase to high Vt. Table 3A belowsummaries the various bias conditions. The detailed operations aresimilar to the discussion above in connection with Table 3.

TABLE 3A BL1 BL2 BL3 BL4 WL P-well Un-selected WL Program BitA/inhibit C0 V 3 V 5 V F −5 V 0 V 0 V or −Vg Program BitB/inhibit D 3 V 0 V F 5 V−5 V 0 V 0 V or −Vg Erase (−FN) for SiN cell F F F F −20 V 0 V −20 VErase (+FN) for FG 0 V 0 V 0 V 0 V +20 V 0 V   20 V Read BitA F F 0 V1.6 V  5 V 0 V 0 V or −Vg Read BitB F F 1.6 V  0 V 5 V 0 V 0 V or −VgBLT1 BLT2 BLT3 BLT4 BLB1 BLB2 BLB3 BLB4 Program BitA 0 V 10 V 10 V 0 V10 V  0 V 0 V 0 V Program BitB 0 V  0 V 10 V 0 V 10 V 10 V 0 V 0 V Erase(−FN) for SiN cell 0 V  0 V  0 V 0 V  0 V  0 V 0 V 0 V Erase (+FN) forFG cell 10 V  10 V 10 V 10 V  10 V 10 V 10 V  10 V  Read BitA (reverseread) 0 V 10 V  0 V 0 V  0 V 10 V 0 V 0 V Read BitB (reverse read) 0 V10 V  0 V 0 V  0 V 10 V 0 V 0 V

FIG. 14 is a simplified view diagram illustrating a programming methodfor programming for the virtual ground nonvolatile memory array 1300 ofFIG. 13 according to another embodiment of the present invention. Asshown, memory array 1400 is similar to memory array 1300. Four memorycells are marked A, B, C, D, respectively. In the programming methodsdescribed above, an extended channel region is formed to reduce punchthrough current. For example, when programming cell A, a drain voltageis applied to doped region 1401 of cell A, a source voltage is appliedto doped region 1403 of cell B, doped region 1402 between cell A andcell B is left floating. In addition, a word line voltage is applied toturn on cell A and cell B. Cell B could have a high or low thresholdvoltage depending on whether cell B has been programmed or erased.Therefore, the condition of cell B can cause variations in programmingcell A. Similarly, when programming cell B, a combination of cell B andcell C is used. As a result the condition of cell C can affect theprogramming of cell B.

To reduce variations caused by data patterns in the memory cells, aprogramming sequence is provided in an embodiment of the invention.First, before programming, the memory cells are erased. Then a series ofmemory cells is programmed in a sequence such that the adjacent cellthat provides the extended channel is erased. In FIG. 14, the preferredsequence of programming is A, B, C, and then D.

In one example, the memory cells have a dielectric charge trappingmaterial, e.g., nitride based charge storage material, in which eachcell can hold charges in one of two portions of its charge storagematerial. In FIG. 14, to program the left hand side portion of eachmemory cell, the programming sequence discussed above can be used. Inanother example, it may be desirable to program the right hand sideportion of the each memory cell, as shown in FIG. 15. In this example,cell D is programmed first, with a drain voltage on doped region 1501, asource voltage on doped region 1503, and a doped region 1502 floating,etc. The preferred programming sequence is then D, C, B, and then A.Note that for memory cell arrays having floating gate charge storagematerial, either sequence can be used, as long as the adjacent cell thatprovides the extended channel is erased.

Referring to the program sequences depicted in FIGS. 14 and 15, theinvention provides a method for programming a plurality of memory cellsnumbered 1 to N in a memory array, where N is an integer. The pluralityof memory cells include:

-   -   a plurality of gate regions numbered 1 to N, each gate region        including a charge storage material;    -   a plurality of doped regions numbered 1 to N+1, each of the        doped regions being disposed between two adjacent gate regions,        the kth doped region being configured as a drain for the kth        memory cell, the (k+1)th doped region being configured as a        source for the kth memory cell and as a drain for the (k+1)th        memory cell; and a word line coupled to a control gate of each        of the plurality of memory cell.        The method for programming the plurality of memory cells        includes, first, erasing each of the plurality of memory cells.        Then, each of the plurality of memory cells is programmed in the        order from cell 1 to cell N. The process for programming the kth        memory cell, k=1 to N, can be briefly summarized below.    -   1. applying a first voltage to the word line to turn on the kth        cell and the (k+1)th memory cell, the kth and the (k+1)th memory        cells being erased memory cells;    -   2. applying a second voltage to the kth doped region;    -   3. floating the (k+1)th doped region; and    -   4. applying a third voltage to the (k+2)th doped region,        Under such bias conditions, channel hot carriers are injected        into a charge storage material in the kth memory cell to program        the kth memory cell.

FIG. 16 is a simplified view diagram illustrating a nonvolatile memoryarray including isolation structures according to yet another embodimentof the present invention. This diagram is merely an example, whichshould not unduly limit the scope of the claims herein. One of ordinaryskill in the art would recognize other variations, modifications, andalternatives. As shown, memory cell array 1600 includes a plurality ofnonvolatile memory cell strings 1601, 1602, . . . , 1608. Each memorycell string being designated as the Mth memory cell string, where M=1 to8. For example, string 1601 is the first string, string 1602 is thesecond string, etc. Adjacent memory cell strings being separated fromeach other by an isolation region, e.g., 1691, 1692, . . . , 1698. Forexample, memory cell string 1601 and 1602 are separated by isolationregion 1692. Each memory cell strings includes a plurality ofnonvolatile memory cells coupled in series. For example, memory cellstring 1601 includes memory cells 1611, 1612, . . . , 1618, etc.

In array 1600, each memory cell can be a nonvolatile memory cell asdescribed in FIG. 2A, 2B, or 3-9, or other non-volatile memory cells.Each memory cell includes two doped regions, which function as a sourceregion or a drain region. Each memory cell also includes a channelregion, a charge storage region above the channel region, and a gate.Each adjacent pair of memory cells share a doped region, i.e. the pairof memory cells are coupled together by the doped region. For example,cell 1611 and cell 1612 share doped region 1619.

Memory array 1600 also includes a plurality of word lines WL1, WL2, . .. , WL8. Each of the word lines is substantially perpendicular to theplurality of nonvolatile memory cell strings. As shown, each of the wordlines is coupled to a memory cell from each of the plurality ofnonvolatile memory cell strings. Additionally, memory cell array 1600also includes a plurality of bit lines 1621, 1622, . . . , 1628. Thesebit lines are substantially parallel to the plurality of memory cellstrings. Each bit line is designated as the Nth bit line, where N=1 to8. For example, bit line 1621 is designated as bit line 1, bit line 1622is designated as bit line 2, etc. Each bit line is coupled to everyother doped region in a corresponding memory cell string. A globalsource line is coupled to every other doped region in each of theplurality of memory strings that are not coupled to any of the bitlines. For example, in memory cell string 1608 on the right hand side ofmemory cell array 1600, bit line 1628 is coupled to doped regions 1631,1633, 1635, 1637, and 1639, whereas global source line 1641 is coupledto doped regions 1632, 1634, 1636, and 1638, etc.

Memory array 1600 also includes four global bit lines. A first globalbit line BL1 is coupled to the first bit line 1621 and the third bitline 1623. A second global bit line BL2 is coupled to the second bitline 1622 and the fourth bit line 1624. A third global bit line BL3 iscoupled to the fifth bit line 1625 and the seventh bit line 1627. Afourth global bit line BL4 is coupled to the sixth bit line 1626 and theeighth bit line 1628.

Memory array 1600 also has multiple select lines that control switchdevices connecting the global bit lines to local bit lines. In FIG. 16,the select lines are not drawn, but are shown as control signals at thegate of each switch device. As shown, a first select line BLB1 iscoupled to a first switch 1651 connecting the first global bit line BL1to the first bit line 1621. The first select line BLB1 is also coupledto a fifth switch 1655 connecting the third global bit line BL3 to thefifth bit line 1625. A second select line BLT1 is coupled to a secondswitch 1652 connecting the second global bit line BL2 to the second bitline 1622. The second select line BLT1 is also coupled to a sixth switch1656 connecting the fourth global bit line BL4 to the sixth bit line1626. A third select line BLB2 is coupled to a third switch 1653connecting the first global bit line BL1 to the third bit line 1623. Thethird select line BLB2 is also coupled to a seventh switch 1657connecting the third global bit line BL3 to the seventh bit line 1627. Afourth select line BLT2 is coupled to a fourth switch 1654 connectingthe second global bit line BL2 to the fourth bit line 1624. The fourthselect line BLT2 is also coupled to an eighth switch 1658 connecting thefourth global bit line BL4 to the eighth bit line 1628. A fifth selectline BLS is coupled to a ninth switch 1659 connecting the global sourceline 1641 to ground.

FIG. 17 is a simplified view diagram illustrating a portion of thenonvolatile memory array 1600 of FIG. 16. FIG. 17 is used to illustratevarious operations methods provided according to embodiments of thepresent invention. Some of the reference numerals from FIG. 16 are keptin FIG. 17. As shown in FIG. 17, a first memory cell A and a secondmemory cell B are separated by an isolation region 1697. Cell A is partof memory cell string 1606, and cell B is part of memory cell string1607. Cell A includes a first doped region 1701, a second doped region1702, and a first control gate 1711. Cell B includes a third dopedregion 1703, a fourth doped region 1704, and a second control gate 1712.

Depending on the embodiment, the memory cells can be floating gate basednonvolatile cells or nitride based nonvolatile cells. For floating gatebased cells, the cell bias conditions for operations such asprogramming, reading, and erasing, are similar to the methods describedin connection with FIGS. 2A, 2B, and 3-5. For nitride based cells, thecell bias conditions for operations such as programming, reading, anderasing, are similar to the methods described in connection with FIGS.2A, 2B, and 6-9. In memory arrays 1600 and 1700, these cell biasconditions are set up by applying appropriate voltages to the wordlines, global bit lines, and select lines. A specific example is listedin Table 4 and discussed in further details below.

TABLE 4 BL1 BL2 BL3 BL4 WL3 BLT1 BLT2 BLB1 BLB2 BLS P-well Un-selectedWL Program BitA (CHE) F F 0 V 5 V 10 V 10 V 0 V 0 V 10 V 0 V 0 V 0 V or−Vg Program BitB (CHE) F F 5 V 0 V 10 V 10 V 0 V 0 V 10 V 0 V 0 V 0 V or−Vg Erase (BTBT HH 5 V 5 V 5 V 5 V −10 V 10 V 10 V  10 V  10 V 0 V 0 Vfor Nitride cell)) Erase (−FN for FG cell) F F F F −20 V  0 V 0 V 0 V  0V 0 V 0 V Read BitA (forward read) F F F 0.6 V  5 V 10 V 0 V 0 V  0 V 5V 0 V 0 V or −Vg Read BitB (forward read) F F 0.6 V  F 5 V  0 V 0 V 0 V10 V 5 V 0 V 0 V or −Vg

According to a specific embodiment, a method programming cell A can bebriefly summarized below.

-   -   1. applying a first voltage (e.g. 0V) to a first global bit line        (BL3);    -   2. applying a second voltage (e.g. 5V) to a second global bit        line (BL4);    -   3. applying a third voltage (e.g. 10V) to a word line (WL3)        coupled to the first control gate (1711) of the first cell and        the second control gate (1712) of the second cell;    -   4. turning on select line BLB2 to couple global bit line BL3 to        bit line 1627 and to couple the first voltage to the third doped        region;    -   5. turning on select line BLT1 to couple global bit line BL4 to        bit line 1626 and to couple the second voltage to the first        doped region; and    -   6. turning off select line BLS to decouple global source line        1641 from a ground potential and to float the second doped        region 1702 and the fourth doped region 1704 which are coupled        to the global source line.

Referring to memory array 1600, the programming method also includesfloating global bit lines BL1 and BL2 and turning off select lines BLT2and BLB1. The substrate of the memory cell array is connected to aground potential. Under the bias conditions described above, channel hotelectrons (CHE) are injected to the charge storage material in cell A.It is noted that cell B can be programmed following a similar method,with 5V on BL3 and 0V on BL4.

Accordingly to another embodiment of the invention, the memory cellshave a dielectric charge trapping material, e.g., nitride based chargestorage materials. A method for erasing can be briefly summarized below.

-   -   1. applying a fourth voltage (e.g. 5V) to the global bit line        (BL3) and the second global bit line (BL4);    -   2. applying a fifth voltage (e.g. −10V) to a word line (WL3)        coupled to the first control gate (1711) of the first cell and        the second control gate (1712) of the second cell;    -   3. applying a ground voltage (e.g. 0V) to the substrate;    -   4. turning on select lines BLT1, BLT2, BLB1, and BLB2 to couple        global bit lines to the local bit lines and to the fourth        voltage to the doped regions connected to the bit lines; and    -   5. turning off select line BLS to decouple source line 1641 from        a ground potential and to float the doped regions which are        coupled to the global source line.

Under the bias conditions described above, the control gate of cell A isbiased at −10V and doped region 1701 is biased at 5V, and the substrateis at 0V. These bias conditions can cause band-to-band tunneling inducedhot holes (BTBT HH) to be injected into the charge storage material toerase cell A. The same bias conditions are also present in cell B.Accordingly, cell B is also erased.

Accordingly to another embodiment of the invention, the memory cellshave floating gate based charge storage materials. A method for erasingcan be briefly summarized below.

-   -   1. applying a sixth voltage (e.g. −20V) to a word line (WL3)        coupled to the first control gate (1711) of the first cell and        the second control gate (1712) of the second cell;    -   2. applying a ground voltage (e.g. 0V) to the substrate;    -   3. floating the global bit lines; and    -   4. turning off the select lines to decouple the local bit lines        and the global source line, and to float the doped regions.

Under the bias conditions described above, the control gate of cell A isbiased at—−20V and doped region 1701 is floating, and the substrate isat 0V. These bias conditions can cause electron to be removed from thefloating gate by Fowler-Nordheil (FN) tunneling. to erase cell A. Thesame bias conditions are also present in cell B. Accordingly, cell B isalso erased.

Accordingly to another embodiment of the invention, a method for readinga memory cell, e.g. cell A in FIG. 17 can be briefly summarized below.

-   -   1. floating the first global bit line (BL3);    -   2. applying a seventh voltage (e.g. 0.6V) to a second global bit        line (BL4);    -   3. applying an eight voltage (e.g. 5V) to a word line (WL3)        coupled to the first control gate (1711) of the first cell;    -   4. turning off select line BLB2 to float bit line 1627 and to        float the third doped region 1703;    -   5. turning on select line BLT1 to couple global bit line BL4 to        bit line 1626 and to couple the seventh voltage to the first        doped region 1701; and    -   6. turning on select line BLS to couple global source line 1641        to the ground potential and couple the second doped region 1702        to the ground potential.

Referring to FIG. 17, the reading method also includes floating globalbit lines BL1 and BL2 and turning off select lines BLT2 and BLB1. Underthe bias conditions described above, memory cell A receives 0.6V at itsdrain, 5V at its gate, and a ground potential at its source. Under suchbias conditions, a current provided at bit line 1626 is an indication ofa threshold voltage of cell A. It is noted that cell B can be readfollowing a similar method, but with 0.6V on BL3, floating BL4, turningoff select line BLT1, and turning on select line BLB2. FIG. 17A issimilar to FIG. 17, but includes more details regarding the neighboringcells adjacent to cells A and B.

In an alternative embodiment of the invention, array 1600 can beimplemented using memory cells that are operated by band-to-band hothole program to low Vt and FN tunneling erase to high Vt. Table 4A belowsummaries the various bias conditions. The detailed operations aresimilar to the discussion above in connection with Table 4.

TABLE 4A BL1 BL2 BL3 BL4 WL3 BLT1 BLT2 BLB1 BLB2 BLS P-well Un-selectedWL Program BitA (BTBT HH) F F 0 V 5 V −10 V 10 V 0 V 0 V 10 V 0 V 0 V 0V or −Vg Program BitB (BTBT HH) F F 5 V 0 V −10 V 10 V 0 V 0 V 10 V 0 V0 V 0 V or −Vg Erase (+FN for FG cell) 0 V 0 V 0 V 0 V +20 V 10 V 10 V 10 V  10 V 0 V 0 V Erase (−FN for SiN cell) F F F F −20 V  0 V 0 V 0 V 0 V 0 V 0 V Read BitA (forward read) F F F 0.6 V   5 V 10 V 0 V 0 V  0V 5 V 0 V 0 V or −Vg Read BitB (forward read) F F 0.6 V  F  5 V  0 V 0 V0 V 10 V 5 V 0 V 0 V or −Vg

The above sequences of steps provides methods of programming, reading,and erasing memory cells in a variety of memory arrays. As shown, themethod uses a combination of steps including a way of applying biasvoltages to word lines, global bit lines, and select lines. Otheralternatives can also be provided where steps are added, one or moresteps are removed, or one or more steps are provided in a differentsequence without departing from the scope of the claims herein.Additionally, although the above has been described in terms of specificvoltages, other voltages can be used depending on the embodiment.Further details of these other devices using the present method can befound throughout the present specification.

While the preferred embodiments of the invention have been illustratedand described, it will be clear that the invention is not limited tothese embodiments only. Numerous modifications, changes, variations,substitutions and equivalents will be apparent to those skilled in theart without departing from the spirit and scope of the invention asdescribed in the claims.

1-82. (canceled)
 83. An integrated circuit, comprising: a memory arrayon a substrate, including: a plurality of memory cell strings, adjacentmemory cell strings being separated from each other by an isolationregion, each memory cell strings including a plurality of memory cellscoupled in series, each adjacent pair of memory cells being coupled by adoped region; a plurality of word lines, each of the word lines beingcoupled to a memory cell from each of the plurality of memory cellstrings; a plurality of bit lines, each bit line being coupled to everyother doped region in a corresponding memory cell string; a commonsource line coupled to every other doped regions in each of theplurality of memory strings that are not coupled to any of the bitlines; a first global bit line coupled to a first bit line and a thirdbit line; a second global bit line coupled to a second bit line and afourth bit line; a third global bit line coupled to a fifth bit line anda seventh bit line; a fourth global bit line coupled to a sixth bit lineand an eighth bit line; a first select line coupled to a first switchelectrically connecting the first global bit line to the first bit line,the first select line being coupled to a fifth switch electricallyconnecting the third global bit line to the fifth bit line; a secondselect line coupled to a second switch electrically connecting thesecond global bit line to the second bit line, the second select linebeing coupled to a sixth switch electrically connecting the fourthglobal bit line to the sixth bit line; a third select line coupled to athird switch electrically connecting the first global bit line to thethird bit line, the third select line being coupled to a seventh switchelectrically connecting the third global bit line to the seventh bitline; a fourth select line coupled to a fourth switch electricallyconnecting the second global bit line to the fourth bit line, the fourthselect line being coupled to an eighth switch electrically connectingthe fourth global bit line to the eighth bit line; and a fifth selectline couples to a ninth switch electrically connecting a global sourceline to the common source line.
 84. The integrated circuit of claim 83,wherein each of the plurality of memory cells comprises a charge storagemember that includes a floating gate.
 85. The integrated circuit ofclaim 83, wherein each of the plurality of memory cells comprises acharge storage member that includes a dielectric material.
 86. Theintegrated circuit of claim 83 wherein the memory cell array includes afirst memory cell and a second memory cell, the first memory cell andthe second memory cell being separated by an isolation region, the firstmemory cell including a first doped region, a second doped region, and afirst control gate, the second memory cell including a third dopedregion, a fourth doped region, and a second control gate, the first andthe second control gates being coupled to a word line, the first dopedregion being coupled to the first bit line, the third doped region beingcoupled to the second bit line, the second doped region and the fourthdoped region being coupled to common source line, the integrated circuitfurther comprising: a circuit unit applying a bias arrangement toprogram the first memory, wherein the bias arrangement includes:applying a substrate voltage to the substrate; applying a first voltageto the first global bit line; applying a second voltage to the secondglobal bit line; applying a third voltage to the word line coupled tothe first control gate of the first cell and the second control gate ofthe second cell; turning on the first switch to couple the first globalbit line to the first bit line; turning on the second switch to couplethe second global bit line to the second bit linen; and turning off theninth switch to decouple the global source line from the common sourceline.
 87. The integrated circuit of claim 86, wherein the biasarrangement further includes applying a ground or negative voltage toword lines not coupled to the first memory cell.
 88. The integratedcircuit of claim 86, wherein each of the plurality of memory cells iscapable of holding multiple bits of information, the programming methodfurther comprising programming the memory cell until a threshold voltageof the memory cell is within a predetermined range of a predeterminedthreshold voltage target.
 89. The integrated circuit of claim 86,wherein the bias arrangement turns on the first channel region and thesecond region and injects a first type of charges to a charge storagelayer of the first memory cell.
 90. The integrated circuit of claim 89,wherein the circuit unit further comprises an erase bias arrangementincluding: applying a fourth voltage to the substrate; applying a fifthvoltage to the first global bit line; turning on the first switch tocouple the first global bit line to the first bit line; and applying asix voltage to the word line coupled to the first control gate of thefirst memory cell, whereby a second type of charges are injected to thecharge storage layer of the first memory cell.
 91. The integratedcircuit of claim 89, wherein the circuit unit further comprises an erasebias arrangement including: applying a fourth voltage to the word linecoupled to the first control gate of the first memory cell; and applyinga fifth voltage to the substrate; whereby the first type of charges areremoved from the charge storage layer of the first memory cell.
 92. Theintegrated circuit of claim 89, wherein the circuit further comprises anerase bias arrangement including: applying a fourth voltage to the wordline coupled to the first control gate of the first memory cell; andapplying a fifth voltage to the substrate, whereby a second type ofcharges are injected from the substrate to the charge storage layer ofthe first memory cell.
 93. The integrated circuit of claim 86, whereinthe bias arrangement injects a first type of charges to a charge storagelayer of the first memory cell and is insufficient to turn on the firstchannel region.
 94. The integrated circuit of claim 93, wherein thecircuit unit further comprises an erase bias arrangement including:applying a fourth voltage to the substrate; and applying a fifth voltageto the word line coupled to the first control gate of the first memorycell, whereby a second type of charges are injected from the firstcontrol gate to the charge storage layer of the first memory cell. 95.The integrated circuit of claim 93, wherein the circuit unit furthercomprises an erase bias arrangement including: applying a fourth voltageto the first global bit line; turning on the first switch to couple thefirst global bit line to the first bit line; applying a fifth voltage tothe word line coupled to the first control gate of the first memorycell; and applying a sixth voltage to the substrate, whereby a secondtype of charges are injected from the substrate to the charge storagelayer of the first memory cell.
 96. The integrated circuit of claim 93,wherein the circuit unit further comprises an erase bias arrangementincluding: applying a fourth voltage to the first global bit line;turning on the first switch to couple the first global bit line to thefirst bit line; applying a fifth voltage to the word line coupled to thefirst control gate of the first memory cell; and applying a sixthvoltage to the substrate, whereby the first type of charges are removedfrom the charge storage layer of the first memory cell.
 97. Theintegrated circuit of claim 86, wherein the circuit unit furthercomprises a read bias arrangement including: applying a fourth voltageto the first global bit line; applying a fifth voltage to the globalsource line; turning on the first switch to couple the first global bitline to the first bit line connecting to the first doped region; turningon the ninth switch to couple the global source line to the commonsource line connecting to the second doped region; applying a sixthvoltage to the word line coupled to the first control gate of the firstmemory cell, whereby a current associated with a threshold voltage ofthe first memory cell is provided at the first global line.